rf power mosfet transistor 120 w, 2 - 175 mhz, 28 v rev. v1 du28120v 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? n - channel enhancement mode device ? dmos structure ? lower capacitances for broadband operation ? high saturated output power ? lower noise figure than bipolar devices ? rohs compliant package outline absolute maximum rat ings at 25 c parameter rating symbol units drain - source voltage 65 v ds v gate - source voltage 20 v gs v drain - source current 12 i ds a power dissipation 250 p d w junction temperature 200 t j c storage temperature - 55 to +150 t stg c thermal resistance 0.7 jc c/w electrical characteristics at 25c parameter symbol min max units test conditions drain - source breakdown voltage bv dss 65 - v v gs = 0.0 v , i ds = 3.0 ma drain - source leakage current i dss - 6.0 ma v gs = 28.0 v , v gs = 0.0 v gate - source leakage current i gss - 6.0 a v gs = 20.0 v , v ds = 0.0 v gate threshold voltage v gs(th) 2.0 6.0 v v ds = 10.0 v , i ds = 600.0 ma forward transconductance g m 3.0 - s v ds = 10.0 v , i ds = 6000.0 ma , v gs = 1.0v, 80 s pulse input capacitance c iss - 270 pf v ds = 28.0 v , f = 1.0 mhz output capacitance c oss - 240 pf v ds = 28.0 v , f = 1.0 mhz reverse capacitance c rss - 48 pf v ds = 28.0 v , f = 1.0 mhz power gain g p 13 - db v dd = 28.0 v, i dq = 600 ma, p out = 120.0 w f =175 mhz drain efficiency ? d 60 - % v dd = 28.0 v, i dq = 600 ma, p out = 120.0 w f =175 mhz return loss r l 10 - % v dd = 28.0 v, i dq = 600 ma, p out = 120.0 w f =175 mhz load mismatch tolerance vswr - t - 30:1 - v dd = 28.0 v, i dq = 600 ma, p out = 120.0 w f =175 mhz f (mhz) z in ( ) z load ( ) 30 3.0 - j12.5 8.0 + j6.0 50 1.5 - j8.5 7.0 +j6.5 100 1.0 - j6.0 6.5 + j5.0 v dd = 28v, i dq = 600ma, p out = 120 w typical device impedance z in is the series equivalent input impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground.
rf power mosfet transistor 120 w, 2 - 175 mhz, 28 v rev. v1 du28120v 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 frequency (mhz) typical broadband performance curves gain (db) gain vs frequency v dd =28 v i dq =600 ma p out =120 w frequency (mhz) efficiency vs frequency v dd =28 v i dq =600 ma p out =120 w power output vs power input v dd =28 v i dq =600 ma supply voltage (v) power output vs supply voltage f=175 mhz i dq =600 ma p in =3.0 w 25 20 15 10 efficiency (%) 70 65 60 55 50 0 25 100 200 power output (w) 0.1 0.3 2 7 9 power input (w) 140 120 100 80 60 40 20 power output (w) 175mhz 100mhz 30mhz 0 50 150 200 16 20 25 30 33 140 120 100 80 60 40 20 50 150 175 0.2 1 5 8 4 3 6
rf power mosfet transistor 120 w, 2 - 175 mhz, 28 v rev. v1 du28120v 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 test fixture schematic test fixture assembly
rf power mosfet transistor 120 w, 2 - 175 mhz, 28 v rev. v1 du28120v 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 m/a - com technology solutions inc. all rights reserved. information in this document is provided in connection with m/a - com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom's terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissions in these materials. macom may make changes to specifications and product descriptions at any time, without notice. macom makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" without warranty of any kind, either express or implied, relating to sale and/or use of macom products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifesaving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale.
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